Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor-Reference-Cited by-同舟云学术

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Direct bandgap opening in sodium-doped antimonene quantum dots: an emerging 2D semiconductor

Published:2020 Issue:6 Volume:7 Page:1588-1596
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Hu Liang¹²³⁴^ORCID,Xu Zhenyu¹²³⁴,Long Fangchao¹²³⁴,Yuan Jun¹²³⁴,Li Hui¹²³⁴,Zhao Ailun¹²³⁴,Han Su-Ting⁵²³⁴^ORCID,Zhang Nian⁶⁷⁸⁹⁴,Liu Xiaosong⁶⁷⁸⁹⁴^ORCID,Ma Chao¹⁰¹¹¹²⁴,Ruan Shuangchen¹²³⁴^ORCID,Zeng Yu-Jia¹²³⁴^ORCID

Affiliation:

1. College of Physics and Optoelectronic Engineering

2. Shenzhen University

3. Shenzhen 518060

4. P. R. China

5. Institute of Microscale Optoelectronics

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Microsystem and Information Technology

8. Chinese Academy of Sciences

9. Shanghai 200050

10. College of Materials Science and Engineering

11. Hunan University

12. Changsha 410082

Abstract

The electric field control of Raman scattering for small molecules can be realized in direct semiconducting antimonene-based field effect transistor.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/MH/D0MH00440E

Reference59 articles.

1. Recent progress in 2D group-VA semiconductors: from theory to experiment

2. Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities

3. 2D Monoelemental Arsenene, Antimonene, and Bismuthene: Beyond Black Phosphorus

4. Black Phosphorus Rediscovered: From Bulk Material to Monolayers

5. Phosphorene and Phosphorene-Based Materials - Prospects for Future Applications

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