Wafer-scale metal chalcogenide thin films via an ion exchange approach-Reference-Cited by-同舟云学术

Wafer-scale metal chalcogenide thin films via an ion exchange approach

Published:2020 Issue:41 Volume:8 Page:14393-14401
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Huihui¹²³⁴⁵,Cao Chuanbao¹²³⁴⁵^ORCID,Ge Binghui⁶⁷⁸⁹⁵^ORCID,Li Yongkai¹⁰¹¹³⁴⁵,Han Junfeng¹⁰¹¹³⁴⁵,Chen Zhuo¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Physics and Chemistry

2. School of Materials Science and Engineering

3. Beijing Institute of Technology

4. Beijing 100081

5. People's Republic of China

6. Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education

7. Institutes of Physical Science and Information Technology

8. Anhui University

9. Hefei 230601

10. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems

11. School of Physics

Abstract

Developing facile and controllable ways to tune the optoelectronic properties of metal chalcogenide thin films via chemical composition is of significant importance for boosting their application in various functional devices.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03540H

Reference62 articles.

1. Recent progress in quantum dot-sensitized solar cells employing metal chalcogenides

2. Butyldithiocarbamate acid solution processing: its fundamentals and applications in chalcogenide thin film solar cells

3. Hierarchical ZnO microspheres photoelectrodes assembled with Zn chalcogenide passivation layer for high efficiency quantum dot sensitized solar cells

4. Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

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