Sn doping induced intermediate band in CuGaS2-Reference-Cited by-同舟云学术

Sn doping induced intermediate band in CuGaS2

Published:2016 Issue:112 Volume:6 Page:110511-110516
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Han M. M.¹²³⁴⁵,Zhang X. L.⁶⁷⁵,Zeng Z.¹²³⁴⁵

Affiliation:

1. Key Laboratory of Materials Physics

2. Institute of Solid State Physics

3. Chinese Academy of Sciences

4. Hefei 230031

5. China

6. University of Science and Technology of China

7. Hefei 230026

Abstract

As an intermediate band material, the dynamical and phase stability and optoelectronic properties of Sn doped CuGaS₂ are systematically investigated, and suggest that CuGaS₂ that is moderately doped with Sn can be a potential candidate for photovoltaic applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA16855H

Reference41 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Limitations and Possibilities for Improvement of Photovoltaic Solar Energy Converters: Part I: Considerations for Earth's Surface Operation

3. Impurity photovoltaic effect in silicon