Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2-Reference-Cited by-同舟云学术

Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO2

Published:2018 Issue:1 Volume:6 Page:119-126
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Arduca E.¹²³⁴^ORCID,Seguini G.¹²³⁴,Martella C.¹²³⁴⁵,Lamperti A.¹²³⁴,Napolitani E.⁶⁷⁸⁴^ORCID,De Salvador D.⁶⁷⁸⁴,Nicotra G.²⁹⁴,Scuderi M.²⁹⁴,Spinella C.²⁹⁴,Perego M.¹²³⁴

Affiliation:

1. Laboratorio MDM

2. IMM-CNR

3. 20864 Agrate Brianza (MB)

4. Italy

5. ISC-CNR

6. Dipartimento di Fisica e Astronomia

7. Universita degli Studi di Padova and MATIS IMM-CNR

8. I-35131 Padova

9. I-95121 Catania

Abstract

Conduction and valence band maxima in Si nanocrystals (d = 4.2 ± 0.9 nm) embedded in SiO₂ as a function of P concentration.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC04732K

Reference64 articles.

1. Multiple Exciton Generation in Colloidal Silicon Nanocrystals

2. Holey Silicon as an Efficient Thermoelectric Material

3. Silicon nanostructures for photonics and photovoltaics

4. Controlled Doping of Silicon Nanocrystals Investigated by Solution-Processed Field Effect Transistors

5. Theoretical analysis of electronic band structure of 2- to 3-nm Si nanocrystals

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