Oxygen-induced defect-healing and photo-brightening of halide perovskite semiconductors: science and application-Reference-Cited by-同舟云学术

Oxygen-induced defect-healing and photo-brightening of halide perovskite semiconductors: science and application

Published:2021 Issue:8 Volume:9 Page:4379-4414
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Huang Like¹²³⁴⁵^ORCID,Ge Ziyi¹²³⁴⁶^ORCID,Zhang Xiaoli⁷⁸⁹⁴,Zhu Yuejin⁵¹⁰¹¹⁴

Affiliation:

1. Ningbo Institute of Materials Technology and Engineering (NIMTE)

2. Chinese Academy of Sciences (CAS)

3. Ningbo 315201

4. China

5. Department of Microelectronic Science and Engineering

6. Center of Materials Science and Optoelectronics Engineering

7. School of Materials Science and Engineering

8. Zhengzhou University

9. Zhengzhou 450001

10. School of Physical Science and Technology

11. Ningbo University

Abstract

The advancement of physical/chemical insights into oxygen induced defect passivation and the associated photo-brightening in the emerging metal halide perovskite semiconductors towards various optoelectronic applications is summarized.

Funder

National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

National Postdoctoral Program for Innovative Talents

China Postdoctoral Science Foundation

National Basic Research Program of China

Natural Science Foundation of Zhejiang Province

Ningbo University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D0TA10946K

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