Stable, efficient p-type doping of graphene by nitric acid
Author:
Affiliation:
1. Department of Engineering
2. University of Cambridge
3. Cambridge CB3 0FA
4. UK
5. Istituto Officina dei Materiali-CNR
6. Laboratorio TASC
7. Trieste I-34149
8. Italy
Abstract
We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance under vacuum annealing up to 300 °C.
Funder
Engineering and Physical Sciences Research Council
Ministero dell’Istruzione, dell’Università e della Ricerca
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA23727D
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