Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Author:

Li Shaobo12345,Wang Zhaofeng5678,Jiang Hanmei12349,Zhang Limei12349,Ren Jingzheng10111213,Zheng Mingtao567814,Dong Lichun12349,Sun Luyi5678

Affiliation:

1. School of Chemistry and Chemical Engineering

2. Chongqing University

3. Chongqing 400044

4. China

5. Department of Chemical & Biomolecular Engineering and Polymer Program

6. Institute of Materials Science

7. University of Connecticut

8. USA

9. Key Laboratory of Low-grade Energy Utilization Technologies & Systems of the Ministry of Education

10. Institute of Technology and Innovation

11. University of Southern Denmark

12. 5230 Odense M

13. Denmark

14. College of Materials and Energy

Abstract

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions.

Funder

National Science Foundation

Air Force Office of Scientific Research

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

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