Photo-induced selective etching of GaN nanowires in water-Reference-Cited by-同舟云学术

Photo-induced selective etching of GaN nanowires in water

Published:2019 Issue:16 Volume:11 Page:7967-7975
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Kraut Max¹²³⁴^ORCID,Pantle Florian¹²³⁴,Winnerl Julia¹²³⁴^ORCID,Hetzl Martin¹²³⁴^ORCID,Eckmann Felix¹²³⁴,Sharp Ian D.¹²³⁴,Stutzmann Martin¹²³⁴

Affiliation:

1. Walter Schottky Institut and Physik-Department

2. Technische Universität München

3. 85748 Garching

4. Germany

Abstract

The photoelectrochemical stability of GaN nanostructures strongly depends on exposed facets and crystal quality and can be enhanced by facet-engineering.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C8NR10021G

Reference54 articles.

1. Photocatalysis Using GaN Nanowires

2. Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

3. One-Step Overall Water Splitting under Visible Light Using Multiband InGaN/GaN Nanowire Heterostructures

4. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

5. Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

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