Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering
Author:
Affiliation:
1. Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India
2. Department of Chemistry, University of Pennsylvania, 231S, 34 Street, Philadelphia, PA 19104-6323, USA
Abstract
Funder
Science and Engineering Research Board
Indian Institute of Technology Indore
Department of Science and Technology, Ministry of Science and Technology, India
University Grants Commission
Council of Scientific and Industrial Research, India
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP04686E
Reference32 articles.
1. Electron–phonon interaction in In-induced structures on Si(111) from first-principles
2. Effects of Configuration Interaction on Intensities and Phase Shifts
3. Observation of Fano resonance in heavily dopedp-type silicon at room temperature
4. Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes
5. Effects of Configuration Interaction on Intensities and Phase Shifts
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