Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering-Reference-Cited by-同舟云学术

Energy dispersive anti-anharmonic effect in a Fano intervened semiconductor: revealed through temperature and wavelength-dependent Raman scattering

Published:2023 Issue:3 Volume:25 Page:1627-1631
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Rani Chanchal¹,Kandpal Suchita¹,Ghosh Tanushree¹,Bansal Love¹,Tanwar Manushree²,Kumar Rajesh¹^ORCID

Affiliation:

1. Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol-453552, India

2. Department of Chemistry, University of Pennsylvania, 231S, 34 Street, Philadelphia, PA 19104-6323, USA

Abstract

Dissociation energy taken to break the electron-phonon bound state (Fano-interferons) varies with excitation photon energy. The Fano interaction weakens by decreasing wavelength or increasing temperature as seen in the Raman thermal map.

Funder

Science and Engineering Research Board

Indian Institute of Technology Indore

Department of Science and Technology, Ministry of Science and Technology, India

University Grants Commission

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP04686E

Reference32 articles.

1. Electron–phonon interaction in In-induced structures on Si(111) from first-principles

2. Effects of Configuration Interaction on Intensities and Phase Shifts

3. Observation of Fano resonance in heavily dopedp-type silicon at room temperature

4. Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. II. Optical Modes

5. Effects of Configuration Interaction on Intensities and Phase Shifts

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