High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode-Reference-Cited by-同舟云学术

High performance, self-powered photodetectors based on a graphene/silicon Schottky junction diode

Published:2018 Issue:35 Volume:6 Page:9545-9551
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Periyanagounder Dharmaraj¹²³⁴⁵^ORCID,Gnanasekar Paulraj¹²³⁴⁵^ORCID,Varadhan Purushothaman⁶⁷⁸⁹^ORCID,He Jr-Hau⁶⁷⁸⁹^ORCID,Kulandaivel Jeganathan¹²³⁴⁵^ORCID

Affiliation:

1. Centre for Nanoscience and Nanotechnology

2. Department of Physics

3. Bharathidasan University

4. Tiruchirappalli-620 024

5. India

6. Computer, Electrical and Mathematical Sciences and Engineering Division

7. King Abdullah University of Science and Technology (KAUST)

8. Thuwal 23955-6900

9. Saudi Arabia

Abstract

In this work, we design and demonstrate a graphene/silicon (Gr/Si) van der Walls (vdW) heterostructure for high-performance photodetectors, where graphene acts as an efficient carrier collector and Si as a photon absorption layer. The Gr/Si heterojunction exhibits superior Schottky diode characteristics with a barrier height of 0.76 eV and performs well as a self-powered detector responding to 532 nm at zero bias.

Funder

Nano Mission Council, Department of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02786B

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3. Self-powered, visible-light photodetector based on thermally reduced graphene oxide–ZnO (rGO–ZnO) hybrid nanostructure