Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor-Reference-Cited by-同舟云学术

Top dielectric induced ambipolarity in an n-channel dual-gated organic field effect transistor

Published:2019 Issue:33 Volume:7 Page:10389-10393
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bairagi Kaushik¹²³^ORCID,Zuccatti Elisabetta¹²³,Calavalle Francesco¹²³,Catalano Sara¹²³,Parui Subir¹²³,Llopis Roger¹²³,Ortmann Frank⁴⁵⁶⁷,Casanova Fèlix¹²³⁸⁹^ORCID,Hueso Luis E.¹²³⁸⁹^ORCID

Affiliation:

1. CIC nanoGUNE

2. 20018 San Sebastian

3. Spain

4. Center for Advancing Electronics Dresden and Dresden Center for Computational Materials Science

5. Technische Universität Dresden

6. 01062 Dresden

7. Germany

8. IKERBASQUE

9. Basque Foundation for Science

Abstract

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic electronic circuits.

Funder

Deutsche Forschungsgemeinschaft

H2020 Marie Skłodowska-Curie Actions

FP7 Ideas: European Research Council

Ministerio de Ciencia e Innovación

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02912E

Reference35 articles.