Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]-Reference-Cited by-同舟云学术

Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]

Published:2021 Issue:3 Volume:50 Page:998-1006
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Robinson Fred¹²³⁴,Newbrook Daniel W.⁵²³⁴^ORCID,Curran Peter⁶⁷⁸⁹¹⁰,de Groot C. H. (Kees)⁵²³⁴^ORCID,Hardie Duncan⁶⁷⁸⁹¹⁰,Hector Andrew L.¹²³⁴^ORCID,Huang Ruomeng⁵²³⁴^ORCID,Reid Gillian¹²³⁴^ORCID

Affiliation:

1. School of Chemistry

2. University of Southampton

3. Southampton SO17 1BJ

4. UK

5. School of Electronics and Computer Science

6. Deregallera Ltd

7. Unit 2

8. De Clare Court

9. Pontygwindy Industrial Estate

10. Caerphilly CF83 3HU

Abstract

[ⁿBu₃Sn(TeⁿBu)] is an effective precursor for the low temperature growth of continuous SnTe thin films by low pressure CVD; temperature-dependent thermoelectric characterisation of these p-type films is reported.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D0DT03760E

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