Defect-induced formation and frustration-driven multiple magnetic transitions in Gd2Co0.90Si2.90

Author:

Kundu Mily12ORCID,Pakhira Santanu3ORCID,Gupta Shuvankar2ORCID,Choudhary Renu4,Sarkar Sourav1ORCID,Lakshminarasimhan N.56,Ranganathan R.2,Mandal Kalyan1,Johnson Duane D.47ORCID,Mazumdar Chandan2ORCID

Affiliation:

1. Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700106, India

2. Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064, India

3. Department of Physics, Maulana Azad National Institute of Technology, Bhopal 462003, India

4. Ames National Laboratory, Iowa State University, Ames, Iowa 50011, USA

5. Electro-organic and Materials Electrochemistry Division, CSIR-Central Electrochemical Research Institute, Karaikudi 630 003, India

6. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201 002, India

7. Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, USA

Abstract

A new non-stoichiometric ternary compound, Gd2Co0.90Si2.90, has been synthesized in single phase by introducing vacancies in the Co and Si sites. A spin-glass type of ground state is observed due to frustration and disorder.

Funder

Department of Atomic Energy, Government of India

U.S. Department of Energy

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

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