Investigation on the growth mechanism of SiC whiskers during microwave synthesis
Author:
Affiliation:
1. School of Materials Science and Engineering
2. Zhengzhou University
3. Zhengzhou 450001
4. P. R. China
5. Henan Key Laboratory of Aeronautical Material and Application Technology
6. Zhengzhou University of Aeronautics
7. Henan 450015
Abstract
SiC whiskers with different morphologies are fabricated by microwave heating and the growth mechanisms of the SiC whiskers are simulated.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP05461D
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