A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2-Reference-Cited by-同舟云学术

A layered wide-gap oxyhalide semiconductor with an infinite ZnO2 square planar sheet: Sr2ZnO2Cl2

Published:2017 Issue:27 Volume:53 Page:3826-3829
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Su Yu¹²³⁴⁵,Tsujimoto Yoshihiro¹²³⁴^ORCID,Miura Akira⁶⁷⁸⁴^ORCID,Asai Shinichiro⁹¹⁰¹¹⁴,Avdeev Maxim¹²¹³¹⁴¹⁵,Ogino Hiraku¹⁶³⁴,Ako Miho¹⁷¹⁸¹⁹²⁰⁴,Belik Alexei A.¹²³⁴,Masuda Takatsugu⁹¹⁰¹¹⁴,Uchikoshi Tetsuo¹²³⁴,Yamaura Kazunari¹²³⁴⁵

Affiliation:

1. Research Centre for Functional Materials

2. National Institute for Materials Science (NIMS)

3. Tsukuba

4. Japan

5. Graduate School of Chemical Sciences and Engineering

6. Faculty of Engineering

7. Hokkaido University

8. Sapporo 060-0808

9. Institute for Solid State Physics

10. The University of Tokyo

11. Kashiwa

12. Bragg Institute

13. Australian Nuclear Science and Technology Organization

14. Lucas Heights

15. Australia

16. National Institute of Advanced Industrial Science and Technology

17. Division of Molecular Science

18. Graduate School of Science and Technology

19. Gunma University

20. Kiryu

Abstract

A new layered perovskite zinc oxychloride, Sr₂ZnO₂Cl₂, with a square planar geometry was successfully synthesized using a high pressure method.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CC/C7CC01011G

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4. G. Misguich and C.Lhuillier, presented in part at the World Scientific, Singapore, 2005

5. A. F. Wells , Structural Inorganic Chemistry, Oxford University Press, Oxford, UK, 1945

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