Memristors based on 2D MoSe<sub>2</sub> nanosheets as artificial synapses and nociceptors for neuromorphic computing-Reference-Cited by-同舟云学术

Memristors based on 2D MoSe₂ nanosheets as artificial synapses and nociceptors for neuromorphic computing

Published:2023 Issue:23 Volume:15 Page:10089-10096
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Duan Huan¹,Wang Dehui¹,Gou Jingxi¹,Guo Feng²³,Jie Wenjing¹^ORCID,Hao Jianhua²³

Affiliation:

1. College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, 610066, China

2. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China

3. The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China

Abstract

Memristors based on CVD-grown 2D layered MoSe2 nanosheets show potential applications in artificial synapses and nociceptors for neuromorphic computing.

Funder

Research Grants Council, University Grants Committee

National Natural Science Foundation of China

Natural Science Foundation of Sichuan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01301D

Reference46 articles.

1. Equivalent-accuracy accelerated neural-network training using analogue memory

2. Neuro-inspired computing chips

3. A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing

4. Co-existence of bipolar nonvolatile and volatile resistive switching based on WO₃ nanowire for applications in neuromorphic computing and selective memory

5. Low-Power Memristor Based on Two-Dimensional Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristor-based artificial tactile perception systems with integrated functions of sensing, storage and computing;Science China Materials;2024-08-28

2. High-performance memristor for energy-efficient artificial optoelectronic synapse based on BiVO4 nanosheets;Journal of Alloys and Compounds;2024-07

3. Two-dimensional material-based memristive devices for alternative computing;Nano Convergence;2024-06-27

4. Fully printed IGZO memristor arrays with robust threshold switching characteristics for artificial nociceptors;Science China Materials;2024-06-21

5. GeTe/MoTe₂ Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications;Small;2024-06-14