Asymmetrically flexoelectric gating effect of Janus transition-metal dichalcogenides and their sensor applications-Reference-Cited by-同舟云学术

Asymmetrically flexoelectric gating effect of Janus transition-metal dichalcogenides and their sensor applications

Published:2020 Issue:33 Volume:8 Page:11457-11467
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Dou Kun Peng¹²³⁴,Hu Hui Hui¹²³⁴,Wang XiaoHan¹²³⁴,Wang XinYi¹²³⁴,Jin Hao⁵⁶⁷⁴^ORCID,Zhang Guang-Ping⁸⁹¹⁰¹¹⁴^ORCID,Shi Xing-Qiang¹²¹³¹⁴⁴^ORCID,Kou Liangzhi¹⁵¹⁶¹⁷¹⁸¹⁹^ORCID

Affiliation:

1. College of Information Science and Engineering

2. Ocean University of China

3. Qingdao 266100

4. China

5. College of Physics and Optoelectronic Engineering

6. Shenzhen University

7. Shenzhen 518060

8. Shandong Key Laboratory of Medical Physics and Image Processing & Shandong Provincial Engineering and Technical Center of Light Manipulations

9. School of Physics and Electronics

10. Shandong Normal University

11. Jinan 250358

12. College of Physics Science and Technology

13. Hebei University

14. Baoding 071002

15. School of Mechanical

16. Medical and Process Engineering

17. Queensland University of Technology

18. Gardens Point Campus

19. Brisbane

Abstract

Janus transition-metal dichalcogenides are promising for wearable motion sensors and chemical sensors due to the nonsymmetric directional information upon bending.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Ocean University of China

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02610G

Reference64 articles.