Transport phenomena of TiCoSb: defect induced modification in the structure and density of states-Reference-Cited by-同舟云学术

Transport phenomena of TiCoSb: defect induced modification in the structure and density of states

Published:2023 Issue:18 Volume:4 Page:4168-4179
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Mahakal S.¹,Das Diptasikha²,Singha Pintu³,Banerjee Aritra³,Das S. C.⁴,Maiti Santanu K.⁵,Assa Aravindh S.⁶,Malik K.¹^ORCID

Affiliation:

1. Department of Physics, Vidyasagar Metropolitan College, Kolkata-700006, India

2. Department of Physics, ADAMAS University, Kolkata-700126, India

3. Department of Physics, University of Calcutta, Kolkata-700009, India

4. Department of Physics, Tamkang University, New Taipei City-251301, Taiwan

5. Physics and Applied Mathematics Unit, Indian Statistical Institute, 203 Barrackpore Trunk Road, Kolkata-700 108, India

6. Nano and Molecular Systems Research Unit (NANOMO), University of Oulu, Oulu, FIN-90014, Finland

Abstract

Role of defects and embedded phases on structural, transport, and electronic properties of TiCoSb have been explored both theoretically and experimentally.

Funder

Science and Engineering Research Board

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D3MA00323J

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5. Prospective high thermoelectric performance of the heavily p -doped half-Heusler compound CoVSn