Formation of buried superconducting Mo2N by nitrogen-ion-implantation-Reference-Cited by-同舟云学术

Formation of buried superconducting Mo2N by nitrogen-ion-implantation

Published:2020 Issue:72 Volume:10 Page:44339-44343
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Lee Joonhyuk¹²³⁴^ORCID,Park Jun Kue⁵⁶⁷⁴,Lee Joon Woo¹⁸⁹⁴,Heo Yunseok¹²³⁴,Oh Yoon Seok¹⁸⁹⁴,Lee Jae S.⁵⁶⁷⁴,Cho Jinhyung¹⁰²³⁴,Jeen Hyoungjeen¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Pusan National University

3. Busan 46241

4. Korea

5. Korea Multi-purpose Accelerator Complex

6. Korea Atomic Energy Research Institute

7. Gyeongju 38180

8. Ulsan National Institute of Science and Technology

9. Ulsan 44919

10. Department of Physics Education

Abstract

Formation of chemically distinct interfaces, including crystalline buried-superconducting Mo₂N, by low-energy nitrogen ion implantation in an epitaxial molybdenum thin film.

Funder

Ulsan National Institute of Science and Technology

National Research Foundation of Korea

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA08533B

Reference43 articles.

1. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications

2. Wide band gap ferromagnetic semiconductors and oxides

3. Al and B ion‐implantations in 6H‐ and 3C‐SiC

4. Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

5. Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C

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