Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors-Reference-Cited by-同舟云学术

Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors

Published:2022 Issue:42 Volume:24 Page:25999-26010
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Sun Shih-Jye¹^ORCID,Menšík Miroslav²^ORCID,Ganzorig Chimed³,Toman Petr²^ORCID,Pfleger Jiří²^ORCID

Affiliation:

1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan, Republic of China

2. Institute of Macromolecular Chemistry, CAS, Heyrovského nám. 2, 162 06 Prague, Czech Republic

3. Center for Nanoscience and Nanotechnology, Department of Chemical and Biological Engineering, School of Engineering and Applied Sciences, National University of Mongolia, Ulaanbaatar 14200, Mongolia

Abstract

Gate-controlled spin-polarized current is formed intrinsically in a spintronic FET based on an antiferromagnetic polymer chain.

Funder

Ministry of Science and Technology, Taiwan

Ministerstvo Školství, Mládeže a Tělovýchovy

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP03119A

Reference42 articles.

1. Challenges for semiconductor spintronics

2. Spintronics: Fundamentals and applications

3. Spintronics

4. Antiferromagnetic spintronics

5. Review on spintronics: Principles and device applications

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