Origin of the Cr3+ concentration-dependent broadband near-infrared emission in Sc2Si2O7-Reference-Cited by-同舟云学术

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Origin of the Cr³⁺ concentration-dependent broadband near-infrared emission in Sc₂Si₂O₇

Published:2024 Issue:17 Volume:53 Page:7268-7272
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Xie Siyuan¹,Ma Boxin¹,Wen Dawei¹,Zeng Qingguang¹,Guo Yue¹^ORCID,Yu Ting¹^ORCID

Affiliation:

1. School of Applied Physics and Materials, Wuyi University, Jiangmen, Guang dong, 529020, P. R. China

Abstract

In Sc2-xSi2O7:xCr3+, the NIR emission is strongly dependent on the Cr3+ concentration, and the NIR emission centered at 840 nm and 1300 nm can be attributed to isolated Cr3+ ions and Cr3+–Cr3+ pairs, respectively.

Funder

National Natural Science Foundation of China

Wuyi University

Natural Science Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/DT/D4DT00784K

Reference18 articles.

1. Design and tuning Cr³⁺-doped near-infrared phosphors for multifunctional applications via crystal field engineering

2. Luminescence properties of Cr³⁺-doped near-infrared emissive fluoroyttrates for light-emitting diodes

3. A broadband near-infrared Cr³⁺-doped phosphor applied to near-infrared light-emitting diodes: enhanced luminescence and thermal stability by annealing

4. Strategies to approach high performance in Cr3+-doped phosphors for high-power NIR-LED light sources

5. Highly efficient and thermally stable Cr3+-activated silicate phosphors for broadband near-infrared LED applications

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