High-sensitivity hybrid MoSe<sub>2</sub>/AgInGaS quantum dot heterojunction photodetector-Reference-Cited by-同舟云学术

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High-sensitivity hybrid MoSe₂/AgInGaS quantum dot heterojunction photodetector

Published:2024 Issue:3 Volume:14 Page:1962-1969
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhao Xunjia¹,Wang Xusheng¹^ORCID,Jia Runmeng¹,Lin Yuhai¹,Guo TingTing¹,Wu Linxiang¹,Hu Xudong¹^ORCID,Zhao Tong¹,Yan Danni¹,zhu Lin²,Chen Zhanyang²,Xu Xinsen²,Chen Xiang¹^ORCID,Song Xiufeng¹^ORCID

Affiliation:

1. MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

2. Shangdong Gemei Tungsten & Molybdenum Material Co. Ltd, Weihai 265222, China

Abstract

A high-performance hybrid photodetector was fabricated from AgInGaS quantum dots and MoSe2, which facilitates cooperative light absorption and charge transfer to enhance the responsivity and detectivity.

Funder

National Natural Science Foundation of China

Taishan Industry Leading Talents

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA07240A

Reference69 articles.

1. Graphene, hexagonal boron nitride, and their heterostructures: properties and applications

2. Graphene-pyramid textured silicon heterojunction for sensitive near-infrared light photodiode

3. Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor

4. Graphene/Quantum Dot Heterostructure Photodetectors: From Material to Performance

5. Graphene–Silicon Device for Visible and Infrared Photodetection

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