Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials-Reference-Cited by-同舟云学术

Theoretical investigation of the vertical dielectric screening dependence on defects for few-layered van der Waals materials

Published:2019 Issue:69 Volume:9 Page:40309-40315
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Singh Amit¹²³⁴⁵^ORCID,Lee Seunghan¹²³⁴,Bae Hyeonhu¹²³⁴,Koo Jahyun⁶⁷⁸⁹,Yang Li¹¹⁰¹¹¹²,Lee Hoonkyung¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. Konkuk University

3. Seoul 05029

4. Korea

5. Department of Mechanical Engineering

6. Department of Condensed Matter Physics

7. Weizmann Institute of Science

8. Rehovot 7610001

9. Israel

10. Washington University in St. Louis

11. St. Louis

12. USA

Abstract

First-principle calculations were employed to analyze the effects induced by vacancies of molybdenum (Mo) and sulfur (S) on the dielectric properties of few-layered MoS₂.

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA07700F

Reference52 articles.

1. Mobility engineering and a metal–insulator transition in monolayer MoS2

2. Single-layer MoS2 transistors

3. Electric Field Effect in Atomically Thin Carbon Films

4. Black phosphorus field-effect transistors

5. Observation of Excitonic Fine Structure in a 2D Transition-Metal Dichalcogenide Semiconductor

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