New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers-Reference-Cited by-同舟云学术

New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers

Published:2014-06-27 Issue:34 Volume:2 Page:7104
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Falcão Bruno P.,Leitão Joaquim P.,Correia Maria R.,Leitão Miguel F.,Soares Maria R.,Moreira Marcus V. B.,de Oliveira Alfredo G.,Matinaga Franklin M.,González Juan C.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC01050G

Reference53 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. Room-Temperature Ultraviolet Nanowire Nanolasers

3. High Performance Silicon Nanowire Field Effect Transistors

4. Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array

5. Nanowire electronic and optoelectronic devices

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