Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires-Reference-Cited by-同舟云学术

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Published:2017 Issue:23 Volume:9 Page:7839-7846
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Boland Jessica L.¹²³⁴⁵,Tütüncüoglu Gözde⁶⁷⁸⁹,Gong Juliane Q.¹²³⁴⁵,Conesa-Boj Sonia¹⁰¹¹¹²¹³¹⁴,Davies Christopher L.¹²³⁴⁵,Herz Laura M.¹²³⁴⁵^ORCID,Fontcuberta i Morral Anna⁶⁷⁸⁹^ORCID,Johnston Michael B.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Physics

2. University of Oxford

3. Clarendon Laboratory

4. Oxford

5. UK

6. Laboratory of Semiconductor Materials

7. École polytechnique fédérale de Lausanne (EPFL)

8. CH-1015 Lausanne

9. Switzerland

10. Kavli Institute of Nanoscience

11. Delft

12. University of Technology Lorentzweg 1

13. 2628 CJ Delft

14. The Netherlands

Abstract

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation into novel electronic and optoelectronic devices.

Funder

Engineering and Physical Sciences Research Council

Swiss National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR00680B

Reference63 articles.

1. Semiconductor nanowires

2. GaAs Core−Shell Nanowires for Photovoltaic Applications