Halide (X = I, Br, Cl) doping to tune the electronic structure for conversion of Pb0.6Sn0.4Te into a high-performing thermoelectric material-Reference-Cited by-同舟云学术

Halide (X = I, Br, Cl) doping to tune the electronic structure for conversion of Pb0.6Sn0.4Te into a high-performing thermoelectric material

Published:2022 Issue:1 Volume:1 Page:15-20
ISSN:2753-1457
Container-title:Energy Advances
language:en
Short-container-title:Energy Adv.

Author:

Shenoy U. Sandhya¹^ORCID,Bhat D. Krishna²^ORCID

Affiliation:

1. Department of Chemistry, College of Engineering and Technology, Srinivas University, Mukka, Mangalore 574146, India

2. Department of Chemistry, National Institute of Technology Karnataka, Surathkal, Mangalore 575025, India

Abstract

The first report of a DFT study on halide (I, Br, Cl) doping in Pb0.6Sn0.4Te, a topological crystalline insulator reveals an opening of band gap and band convergence without breaking crystal mirror symmetry, leading to high thermoelectric performance.

Funder

Council of Scientific and Industrial Research

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/YA/D1YA00025J

Reference48 articles.

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4. Review of current high-ZT thermoelectric materials

5. Enhanced thermoelectric properties of vanadium doped SrTiO3: A resonant dopant approach

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