In0.5Ga0.5N layers by atomic layer deposition-Reference-Cited by-同舟云学术

In0.5Ga0.5N layers by atomic layer deposition

Published:2021 Issue:38 Volume:9 Page:13077-13080
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Rouf Polla¹^ORCID,Palisaitis Justinas¹,Bakhit Babak¹,O'Brien Nathan J.¹^ORCID,Pedersen Henrik¹^ORCID

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, Linköping SE-58183, Sweden

Abstract

We present an ALD approach to metastable In1−xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse.

Funder

Vetenskapsrådet

Knut och Alice Wallenbergs Stiftelse

Stiftelsen för Strategisk Forskning

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02408F

Reference19 articles.

1. Band structure and fundamental optical transitions in wurtzite AlN

2. Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method

3. M. A. H.Howlader , A. K.Saha , M. S.Hasan and M. R.Islam , Proc. 2014 3rd Int. Conf. Dev. Renew. Energy Technol. ICDRET 2014, 48

4. Incomplete Solubility in Nitride Alloys

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition and application of group III nitrides semiconductor and their alloys;Acta Physica Sinica;2024

2. Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates;Scientific Reports;2023-11-07

3. Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys;Crystal Growth & Design;2023-09-19

4. Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells;Acta Physica Sinica;2023

5. Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition;Inorganic Chemistry;2022-12-14