A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy
Author:
Affiliation:
1. Department of Physics
2. The Hong Kong University of Science and Technology
3. , China
4. South University of Science and Technology of China
5. Shenzhen, China
Abstract
A scanning photocurrent microscopy method is applied to study the lateral expansion of depletion regions at the metal/2D TMDC Schottky contacts with different gate and drain biases.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04592D
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