CVD controlled growth of large-scale WS2 monolayers-Reference-Cited by-同舟云学术

CVD controlled growth of large-scale WS2 monolayers

Published:2019 Issue:51 Volume:9 Page:29628-29635
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Zhuhua¹²³⁴,Lv Yanfei¹²³⁴,Li Jingzhou⁵⁶⁷⁴⁸,Huang Feng¹²³⁴,Nie Pengbo⁵⁶⁷⁴⁸,Zhang Siwei⁵⁶⁷⁴⁸,Zhao Shichao¹²³⁴,Zhao Shixi⁸⁶⁷⁴^ORCID,Wei Guodan⁵⁶⁷⁴⁸^ORCID

Affiliation:

1. College of Materials & Environmental Engineering

2. Hangzhou Dianzi University

3. Hangzhou

4. P. R. China

5. Tsinghua-Berkeley Shenzhen Institute (TBSI)

6. Tsinghua University

7. Shenzhen

8. Tsinghua Shenzhen International Graduate School

Abstract

Monolayer tungsten disulfide (WS₂) with a direct band gap of ca. 2.0 eV and stable properties has been a hotspot in two-dimensional (2D) nanoelectronics and optoelectronics.

Funder

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Development and Reform Commission of Shenzhen Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA06219J

Reference56 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides