High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature-Reference-Cited by-同舟云学术

High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

Published:2019 Issue:1 Volume:9 Page:58-64
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Park Kyoung Woo¹²³⁴⁵^ORCID,Lee Seunghee¹²³⁴⁵,Lee Hyunkoo⁶⁷⁸⁹⁵^ORCID,Cho Yong-Hwan¹⁰¹¹⁵,Park Yong Cheon¹²¹³³⁴⁵,Im Sung Gap¹²¹³³⁴⁵^ORCID,Ko Park Sang-Hee¹²³⁴⁵

Affiliation:

1. Smart & Soft Materials & Devices Laboratory (SSMD)

2. Department of Materials Science and Engineering

3. Korea Advanced Institute of Science and Technology (KAIST)

4. Daejeon 34141

5. South Korea

6. Flexible Device Research Group

7. Reality Device Research Division

8. Electronics and Telecommunications Research Institute (ETRI)

9. Daejeon 34129

10. Dong Woo Fine-Chem

11. Pyeongtaek-si

12. Functional Thin Films Laboratory (FTFL)

13. Department of Chemical and Biomolecular Engineering

Abstract

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA08449A

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