Composition and bandgap control of AlxGa1−xN films synthesized by plasma-assisted pulsed laser deposition
Author:
Affiliation:
1. Department of Optical Science and Engineering
2. Fudan University
3. Shanghai 200433
4. China
5. Institute of Ion Beam Physics and Materials Research
6. Helmholtz-Zentrum Dresden-Rossendorf
7. 01314 Dresden
8. Germany
Abstract
Ternary AlxGa1−xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC00475F
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5. Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes
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