Electronic state evolution of oxygen-doped monolayer WSe2 assisted by femtosecond laser irradiation

Author:

Wang Lei1ORCID,Wang Dan2,Luo Yang13,Xu Chen-Yu1,Cui Lin1,Li Xian-Bin1ORCID,Sun Hong-Bo4ORCID

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China

2. Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA

3. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

4. State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing 100084, China

Abstract

We reveal an excited-state photochemical reaction mechanism for monolayer WSe2 under the Mott density condition, which could be used as an electronic state criterion for femtosecond-laser modified monolayer transition metal dichalcogenides.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

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