Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies-Reference-Cited by-同舟云学术

Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies

Published:2017 Issue:19 Volume:19 Page:11816-11824
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Krzywiecki Maciej¹²³⁴⁵^ORCID,Grządziel Lucyna⁴⁵⁶⁷,Sarfraz Adnan¹²³,Erbe Andreas¹²³⁸⁹

Affiliation:

1. Max-Planck-Institut für Eisenforschung GmbH

2. 40237 Düsseldorf

3. Germany

4. Institute of Physics – Center for Science and Education

5. Silesian University of Technology

6. 44-100 Gliwice

7. Poland

8. Department of Materials Science and Engineering

9. NTNU

Abstract

The interfacial electronic properties of the tin oxide/copper phthalocyanine layer stack were investigated with two complementary photoemission methods.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP01688C

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