Electric field writing and erasing of skyrmions in magnetoelectric Cu<sub>2</sub>OSeO<sub>3</sub> with an ultralow energy barrier-Reference-Cited by-同舟云学术

Electric field writing and erasing of skyrmions in magnetoelectric Cu₂OSeO₃ with an ultralow energy barrier

Published:2022 Issue:44 Volume:14 Page:16655-16660
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Huang Ping¹²³^ORCID,Cantoni Marco⁴,Magrez Arnaud⁵,Carbone Fabrizio³,Rønnow Henrik M.²

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, , CN-710049 Xi'an, China

2. Laboratory for Quantum Magnetism (LQM), Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

3. Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

4. Centre Interdisciplinaire de Microscopie Électronique (CIME), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

5. Crystal Growth Facility, Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland

Abstract

In situ Lorentz transmission electron microscopy experiments demonstrate that skyrmions in magnetoelectric helimagnet Cu2OSeO3 can be written and erased locally by electric fields with an ultralow energy barrier.

Funder

Xi’an Jiaotong University

National Natural Science Foundation of China

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

H2020 European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR04399H

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