Cd-doping a facile approach for better thermoelectric transport properties of BiCuSeO oxyselenides-Reference-Cited by-同舟云学术

Cd-doping a facile approach for better thermoelectric transport properties of BiCuSeO oxyselenides

Published:2016 Issue:40 Volume:6 Page:33789-33797
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Farooq M. U.¹²³⁴,Butt Sajid⁵⁶⁷⁸⁹,Gao Kewei¹²³⁴,Zhu YingCai¹⁰¹¹¹²⁴,Sun Xigui¹²³⁴,Pang XiaoLu¹²³⁴,Khan Sajid U.⁵⁶⁷⁸,Mohmed Fida⁹¹¹³¹⁴⁴,Mahmood Asif¹⁵¹⁶¹⁷¹⁸¹⁹,Mahmood Nasir²⁰²¹²²²³²⁴,Xu Wei¹⁰¹¹¹²⁴²⁵

Affiliation:

1. School of Materials Science and Engineering

2. University of Science and Technology Beijing

3. Beijing 100083

4. People’s Republic of China

5. Department of Materials Science and Engineering

6. Institute of Space Technology

7. Islamabad 44000

8. Pakistan

9. State Key Laboratory of New Ceramics and Fine Processing

10. Beijing Synchrotron Radiation Facility

11. Institute of High Energy Physics

12. Chinese Academy of Sciences

13. Tsinghua University

14. Beijing 100084

15. Department of Material Science and Engineering

16. College of Engineering

17. Peking University

18. Beijing 100871

19. China

20. Institute of Superconducting and Electronic Materials

21. Australian Institute of Innovative Materials

22. University of Wollongong

23. North Wollongong

24. Australia

25. Rome International Center for Materials Science, Superstripes, RICMASS

Abstract

We have found that substitution of Bi by Cd in the crystal lattice of BiCuSeO is a very effective way of improving the transport properties to obtain a higher ZT value for Cd-doped BiCuSeO.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA01686C

Reference52 articles.

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