The relationship between interfacial bonding and radiation damage in adsorbed DNA-Reference-Cited by-同舟云学术

The relationship between interfacial bonding and radiation damage in adsorbed DNA

Published:2014 Issue:29 Volume:16 Page:15319-15325
ISSN:1463-9076
Container-title:Phys. Chem. Chem. Phys.
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Rosenberg R. A.¹²³,Symonds J. M.⁴⁵⁶,Vijayalakshmi K.¹²³,Mishra Debabrata⁷⁸⁹,Orlando T. M.⁴⁵⁶,Naaman R.⁷⁸⁹

Affiliation:

1. Advanced Photon Source

2. Argonne National Laboratory

3. Argonne, USA

4. School of Chemistry and Biochemistry and School of Physics

5. Georgia Institute of Technology

6. Atlanta, USA

7. Department of Chemical Physics

8. Weizmann Institute

9. Rehovot 76100, Israel

Abstract

Illustration showing that secondary electrons have a higher damage probability for thiolated DNA as opposed to unthiolated DNA, due to the former's higher density of LUMO states, which leads to more efficient capture of the low energy electrons.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CP/C4CP01649A

Reference70 articles.

1. Resonant Formation of DNA Strand Breaks by Low-Energy (3 to 20 eV) Electrons

2. Electron capturing by DNA

3. On the capturing of low-energy electrons by DNA

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5. Biochemistry of DNA Lesions

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