Exploiting flux shadowing for strain and bending engineering in core–shell nanowires-Reference-Cited by-同舟云学术

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Exploiting flux shadowing for strain and bending engineering in core–shell nanowires

Published:2023 Issue:5 Volume:15 Page:2254-2261
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Al Humaidi Mahmoud¹²³^ORCID,Jakob Julian¹²,Al Hassan Ali²³^ORCID,Davtyan Arman³^ORCID,Schroth Philipp¹²³,Feigl Ludwig²,Herranz Jesús⁴,Novikov Dmitri⁵,Geelhaar Lutz⁴,Baumbach Tilo¹²,Pietsch Ullrich³

Affiliation:

1. Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany

2. Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany

3. Solid State Physics, Emmy-Noether Campus, Walter-Flex Straße 3, D-57068 Siegen, Germany

4. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

5. Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany

Abstract

Here we report on the non-uniform shell growth of InxGa1−xAs on the GaAs nanowire (NW) core by molecular beam epitaxy (MBE).

Funder

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR03279A

Reference31 articles.

1. A Review on Size‐Dependent Mechanical Properties of Nanowires

2. Core–shell nanowires: From the ensemble to single-wire characterization

3. Approaching the ideal elastic strain limit in silicon nanowires

4. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

5. Strain-mediated bandgap engineering of straight and bent semiconductor nanowires

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stemless InSb nanowire networks and nanoflakes grown on InP;Nanotechnology;2024-07-24

2. Bending and reverse bending during the fabrication of novel GaAs/(In,Ga)As/GaAs core–shell nanowires monitored by in situ x-ray diffraction;Nanotechnology;2024-05-01

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