Interface charge-transfer induced intralayer excited-state biexcitons in graphene/WS2 van der Waals heterostructures-Reference-Cited by-同舟云学术

Interface charge-transfer induced intralayer excited-state biexcitons in graphene/WS2 van der Waals heterostructures

Published:2019 Issue:28 Volume:11 Page:13552-13557
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Yang¹²³⁴^ORCID,Stolte Nore¹²³⁴^ORCID,Li Baikui¹²³⁴⁵,Li Hui¹²³⁴^ORCID,Cheng Guanghui¹²³⁴^ORCID,Pan Ding¹²³⁴⁶,Wang Jiannong¹²³⁴^ORCID

Affiliation:

1. Department of Physics

2. The Hong Kong University of Science and Technology

3. Kowloon

4. China

5. College of Physics and Optoelectronic Engineering

6. Department of Chemistry

Abstract

Highly stable excited-state biexcitons are found in graphene/WS₂/BN heterostructures, which is attributed to the charge transfer and exciton dissociation at the hetero-interface.

Funder

Research Grants Council, University Grants Committee, University Grants Committee

Shenzhen Science and Technology Innovation Commission

Croucher Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR02862E

Reference40 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Electrical control of neutral and charged excitons in a monolayer semiconductor

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5. Ultrafast carrier dynamics in two-dimensional transition metal dichalcogenides

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