Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5-Reference-Cited by-同舟云学术

Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

Published:2015 Issue:26 Volume:17 Page:4871-4876
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Miao¹²³,Lu Yegang¹²³,Shen Xiang⁴⁵²³,Wang Guoxiang⁴⁵²³,Li Jun¹²³,Dai Shixun⁴⁵²³,Song Sannian⁶⁷⁸⁹,Song Zhitang⁶⁷⁸⁹

Affiliation:

1. Faculty of Information Science and Engineering

2. Ningbo University

3. , China

4. Laboratory of Infrared Material and Devices

5. The Advanced Technology Research Institute

6. State Key Laboratory of Functional Materials for Informatics

7. Shanghai Institute of Micro-system and Information Technology

8. Chinese Academy of Sciences

9. Shanghai 200050, PR China

Abstract

In this paper, the effect of Sb₂Se on the phase change characteristics of Ge₂Sb₂Te₅ (GST) is systemically studied for applications in phase-change random access memory (PRAM).

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE00656B

Reference31 articles.

1. Structural investigation ofGeSb2Te4: A high-speed phase-change material

2. Si–Sb–Te materials for phase change memory applications

3. Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials

4. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

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