Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices
Author:
Affiliation:
1. Key Laboratory of Preparation and Applications of Environmental Friendly Materials (Jilin Normal University)
2. Ministry of Education
3. Changchun 130103
4. China
5. Department of Chemistry
Abstract
CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA00764G
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