Direct determination of trace impurities in high-purity silicon nitride by axial viewed inductively coupled plasma optical emission spectrometry using a slurry nebulization technique-Reference-Cited by-同舟云学术

Direct determination of trace impurities in high-purity silicon nitride by axial viewed inductively coupled plasma optical emission spectrometry using a slurry nebulization technique

Published:2015 Issue:4 Volume:30 Page:909-915
ISSN:0267-9477
Container-title:Journal of Analytical Atomic Spectrometry
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Wang Zheng¹²³⁴,Zhang Junye¹²³⁴,Zhang Guoxia¹²³⁴,Qiu Deren⁵⁶⁷⁴,Yang Pengyuan⁵⁶⁷⁴

Affiliation:

1. Shanghai Institute of Ceramics

2. Chinese Academy of Sciences

3. Shanghai 200050

4. China

5. Department of Chemistry

6. Fudan University

7. Shanghai 200433

Abstract

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/JA/C4JA00429A

Reference33 articles.

1. Fabrication of silicon nitride nanoceramics—Powder preparation and sintering: A review

2. The effect of impurities on the densification of reaction-bonded silicon nitride (RBSN)

3. Atomic emission and atomic absorption spectrometric analysis of high-purity powders for the production of ceramics

4. Prediction of nonrandom mixing in lattice model with multi-references

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