Halogen doping of p-type inorganic hole transport layer: electronic nature-based dopant engineering for modulating hole selectivity in inverted planar perovskite solar cells-Reference-Cited by-同舟云学术

Halogen doping of p-type inorganic hole transport layer: electronic nature-based dopant engineering for modulating hole selectivity in inverted planar perovskite solar cells

Published:2024 Issue:20 Volume:12 Page:7306-7324
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Menon Vidya Sudhakaran¹^ORCID,Ganesan Saraswathi¹^ORCID,Raman Rohith Kumar²^ORCID,Alagumalai Ananthan¹^ORCID,Krishnamoorthy Ananthanarayanan¹^ORCID

Affiliation:

1. Organic and Perovskite Photovoltaics Laboratory (OPPV), Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India, 603203

2. Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India, 603203

Abstract

The role of metal cation and halide anion dopants in regulating the properties of NiOx hole transport layer (HTL) was explored. This study confirms that halide dopants also increase the Ni3+ defect density and work function of p-type inorganic HTL.

Funder

Science and Engineering Research Board

SRM Institute of Science and Technology

Department of Science and Technology, Ministry of Science and Technology, India

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC00867G

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