Transparent metal-oxide nanowires and their applications in harsh electronics-Reference-Cited by-同舟云学术

Transparent metal-oxide nanowires and their applications in harsh electronics

Published:2019 Issue:2 Volume:7 Page:202-217
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhou Ziyao¹²³⁴²,Lan Changyong¹²³⁵⁶^ORCID,Wei Renjie¹²³⁴²^ORCID,Ho Johnny C.¹²³⁴²^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. City University of Hong Kong

3. China

4. Shenzhen Research Institute

5. School of Optoelectronic Science and Engineering

6. University of Electronic Science and Technology of China

Abstract

This work provides a comprehensive review of the recent advances in high-performance transparent metal-oxide nanowires and their corresponding device applications in harsh electronics.

Funder

Research Grants Council, University Grants Committee

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Commission

City University of Hong Kong

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04501A

Reference132 articles.

1. A Fully Transparent Resistive Memory for Harsh Environments

2. Resistive Oxygen Gas Sensors for Harsh Environments

3. Review on materials, microsensors, systems and devices for high-temperature and harsh-environment applications

4. Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

5. The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

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