Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity-Reference-Cited by-同舟云学术

Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity

Published:2022 Issue:31 Volume:14 Page:11369-11377
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jiang Shujuan¹,Yin Huabing²^ORCID,Zheng Guang-Ping¹³^ORCID

Affiliation:

1. Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China

2. Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China

3. Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China

Abstract

GaOCl monolayers are 2D semiconductors with wide bandgaps (∼4.46 eV), high carrier mobilities and strong anisotropy in Poisson's ratio, which can be tuned to have hole-doping induced ferromagnetism and outstanding multidirectional piezoelectricity.

Funder

Research Grants Council, University Grants Committee

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02821B

Reference73 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Nine New Phosphorene Polymorphs with Non-Honeycomb Structures: A Much Extended Family

3. Fabrication of a Freestanding Boron Nitride Single Layer and Its Defect Assignments

4. Defect-engineered 2D/2D hBN/g-C3N4 Z-scheme heterojunctions with full visible-light absorption: Efficient metal-free photocatalysts for hydrogen evolution

5. Synthesis of MoS2 and MoSe2 Films with Vertically Aligned Layers

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