Time-evolution of the electrical characteristics of MoS2 field-effect transistors after electron beam irradiation-Reference-Cited by-同舟云学术

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Time-evolution of the electrical characteristics of MoS2 field-effect transistors after electron beam irradiation

Published:2018 Issue:14 Volume:20 Page:9038-9044
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lu Ming-Yen¹²³⁴^ORCID,Wu Shang-Chi⁵⁶⁷⁴,Wang Hsiang-Chen⁵⁶⁷⁴^ORCID,Lu Ming-Pei⁸³⁴

Affiliation:

1. Department of Materials Science and Engineering and High Entropy Materials Center

2. National Tsing Hua University

3. Hsinchu 300

4. Taiwan

5. Graduate Institute of Opto-Mechatronics

6. National Chung Cheng University

7. Chia-Yi 62102

8. National Nano Device Laboratories

Abstract

The mechanisms of threshold voltage shift evolution of MoS₂ FETs after electron beam irradiation were demonstrated experimentally for the first time.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP00792F

Reference43 articles.

1. Graphene-modified electrodes for enhancing the performance of microbial fuel cells

2. Electronic spin transport and spin precession in single graphene layers at room temperature

3. Near-unity photoluminescence quantum yield in MoS2

4. Experimental observation of the quantum Hall effect and Berry's phase in graphene

5. Stretching and Breaking of Ultrathin MoS2

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3. Electron Irradiation Engineering Modulated MoS₂-Based Phototransistor;IEEE Transactions on Nuclear Science;2023-10

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