Overlayer induced air gap acting as a responsivity amplifier for majority carrier graphene–insulator–silicon photodetectors-Reference-Cited by-同舟云学术

Overlayer induced air gap acting as a responsivity amplifier for majority carrier graphene–insulator–silicon photodetectors

Published:2018 Issue:26 Volume:6 Page:6958-6965
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Hong-Ki¹²³⁴,Choi Jaewu¹²³⁴^ORCID

Affiliation:

1. Quantum Information Display Laboratory

2. Department of Information Display

3. Seoul

4. Republic of Korea

Abstract

Photo-responsivity of majority carrier graphene–insulator–silicon (GIS) photodetectors, which act as photocurrent amplifiers and thus have high potential for various future electro-optic applications requiring their high responsivity, low dark current, high on–off ratio and high detectivity.

Funder

Ministry of Education

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02178C

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