Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(0 0 0 −1) surface at the nanoscale
Author:
Funder
Ministry of Science, ICT and Future Planning
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C6NR07118J
Reference33 articles.
1. H. Morkoç , Handbook of Nitride Semiconductors and Devices, Wiley, Weinheim, 2008, vol. 1, ch. 1
2. Zinc-blende–wurtzite polytypism in semiconductors
3. Hot electron microwave conductivity of wide bandgap semiconductors
4. Luminescence and lattice parameter of cubic gallium nitride
5. Temperature-dependent optical band gap of the metastable zinc-blende structure β-GaN
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3. Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy;Applied Physics Letters;2021-07-19
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