Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors-Reference-Cited by-同舟云学术

Compromise of electrical leakage and capacitance density effects: a facile route for high mobility and sharp subthreshold slope in low-voltage operable organic field-effect transistors

Published:2011 Issue:4 Volume:21 Page:998-1004
ISSN:0959-9428
Container-title:J. Mater. Chem.
language:en
Short-container-title:J. Mater. Chem.

Author:

Xu Wentao,Rhee Shi-Woo

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2011/JM/C0JM02401E

Reference44 articles.

1. Water-stable organic transistors and their application in chemical and biological sensors

2. Nanoscale organic and polymeric field-effect transistors as chemical sensors

3. Surface engineering for high performance organic electronic devices: the chemical approach

4. Organic thin-film transistors: A review of recent advances

5. High-Performance Organic Field-Effect Transistors: Molecular Design, Device Fabrication, and Physical Properties

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