Exceptionally high electronic mobility in defect-rich Eu2ZnSb2−xBix alloys-Reference-Cited by-同舟云学术

Exceptionally high electronic mobility in defect-rich Eu2ZnSb2−xBix alloys

Published:2020 Issue:12 Volume:8 Page:6004-6012
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Chanakian Sevan¹²³⁴^ORCID,Uhl David⁵⁶⁷⁴,Neff David⁸⁶⁷⁴,Drymiotis Fivos⁸⁶⁷⁴,Park Junsoo⁹¹⁰¹¹⁴^ORCID,Petkov Valeri¹²¹³¹⁴⁴^ORCID,Zevalkink Alexandra¹²³⁴^ORCID,Bux Sabah⁵⁶⁷⁴

Affiliation:

1. Department of Chemical Engineering and Materials Science

2. Michigan State University

3. East Lansing

4. USA

5. Thermal Energy Conversion Research and Advancement Group

6. Jet Propulsion Laboratory

7. Pasadena

8. Thermal Energy Conversion Applications & Systems Group

9. Energy Technologies Area

10. Lawrence Berkeley National Laboratory

11. Berkeley

12. Department of Physics

13. Central Michigan University

14. Mt. Pleasant

Abstract

Alloying Eu₂ZnSb₂ with Bi on the Sb site leads to an increase in mobility while still lowering the lattice thermal conductivity.

Funder

National Science Foundation

National Aeronautics and Space Administration

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TA/C9TA14170G

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