Synthesis of large-area monolayer and few-layer MoSe2 continuous films by chemical vapor deposition without hydrogen assistance and formation mechanism-Reference-Cited by-同舟云学术

Synthesis of large-area monolayer and few-layer MoSe2 continuous films by chemical vapor deposition without hydrogen assistance and formation mechanism

Published:2021 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yan Hui¹²³⁴⁵^ORCID,Yu Tong¹²³⁴⁵,Li Heng⁶⁷⁸⁹¹⁰,Li Zhuocheng¹²³⁴⁵,Tang Haitao¹²³⁴⁵,Hu Hangwei¹²³⁴⁵,Yu Hao¹²³⁴⁵,Yin Shougen¹²³⁴⁵

Affiliation:

1. Tianjin Key Laboratory of Photoelectric Materials and Devices

2. School of Materials Science and Engineering

3. Tianjin University of Technology

4. Tianjin 300384

5. China

6. Fujian Provincial Key Laboratory of Semiconductors and Applications

7. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices

8. Department of Physics

9. Xiamen University

10. Xiamen 361005

Abstract

Large-area continuous MoSe₂ films have been synthesized by APCVD method without the assistance of hydrogen. The theory was proposed to account quantitatively for the formation behavior of the MoSe₂ films.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR00552A

Reference55 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Emerging Photoluminescence in Monolayer MoS2

3. Single-layer MoS2 transistors